Hydrothermally in-situ Deposited BiVO4 Crystals Via a Seed-free Approach and its Application in Water Treatment and Hydrogen Generation | ||
| مجله اکوهیدرولوژی | ||
| Article 24, Volume 5, Issue 4, January 2019, Pages 1355-1369 PDF (1.51 M) | ||
| Document Type: Research Article | ||
| DOI: 10.22059/ije.2018.269611.986 | ||
| Authors | ||
| Mohammad Reza Nazemzadegan1; Roghayeh Ghasempour* 2; Hossein Yousefi3 | ||
| 1Ph.D. Student, Faculty of New Science and Technology, University of Tehran, Tehran, Iran | ||
| 2Assistant Professor, Faculty of New Science and Technology, University of Tehran, Tehran, Iran | ||
| 3Associate Professor, Faculty of New Science and Technology, University of Tehran, Tehran, Iran | ||
| Abstract | ||
| Thin films of Bismuth Vanadate (BiVO4)crystals are deposited on bare FTO substrates using hydrothermal method. The samples are annealed in a temperature range from 450 oC to 550 oC. X-Ray Diffraction (XRD) pattern of the prepared BiVO4 thin films confirms its monoclinic structure. Scanning Electron Microscopy (SEM) images determine the truncated bipyramid shape of the crystals while a significant number of crystals expose their high photoelectrochemically active facet. By controlling and optimizing parameters such as temperature, deposition time, precursor concentration, and annealing temperature, a uniform and robust BiVO4 layer is synthesized. Finally, the optimum BiVO4/FTO layer is prepared at 120 oC for at least 4 hours by using a 0.027M BiVO4 precursor solution with a pH of 1.2. In order to have a measurement for the application of the fabricated crystals in water treatment and Hydrogen generation, the linear sweep voltammetry (LSV) measurements of samples are measured and compared. The LSV tests show a photo-response up to 70 µA/cm2 at V=1 V (vs Ag/AgCl) for BiVO4/FTO samples annealed at temperatures higher than 500 oC. In addition, a simple model are proposed to understand the growth behavior of BiVO4 crystals under different growth conditions. | ||
| Keywords | ||
| Monoclinic BiVO4; Seed-free hydrothermal growth; PEC | ||
| References | ||
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