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Behavior of functionally graded semiconducting rod with internal heat source under a thermal shock | ||
| Journal of Computational Applied Mechanics | ||
| دوره 55، شماره 1، فروردین 2024، صفحه 51-61 اصل مقاله (777.94 K) | ||
| نوع مقاله: Research Paper | ||
| شناسه دیجیتال (DOI): 10.22059/jcamech.2024.371467.949 | ||
| نویسندگان | ||
| Praveen Ailawalia1؛ Marin Marin* 2، 3؛ Harish Nagar1 | ||
| 1Department of Mathematics, University Institute of Science Chandigarh University, Gharaun-Mohali Punjab, India. | ||
| 2Department of Mathematics and Computer Science, Transilvania University of Brasov, 500036 Brasov, Romania. | ||
| 3Academy of Romanian Scientists, Ilfov Street, 3, 050045 Bucharest, Romania. | ||
| چکیده | ||
| The research article investigates the behavior of a functionally graded semiconducting rod with internal heat source of length l under the thermal shock. A sudden heat source is applied to the left boundary of the finite rod. The equations of motion are solved analytically and the analytical expressions of displacement, carrier density, temperature distribution and stresses are obtained. The numerical values of these expressions are calculated and presented graphically to show the effect of non-homogeneity parameter on the components. The variations of the parameters are shown for different theories of thermoelasticity namely modiffed Green-Lindsay(MGL) theory, Green-Lindsay(GL) theory, Lord-Shulman(LS) theory and Coupled(CT) theory. | ||
| کلیدواژهها | ||
| Semiconducting؛ Functionally Graded؛ heat source؛ Carrier density؛ internal heat source | ||
| مراجع | ||
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